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• • • A memristor (; a of memory resistor) is a hypothetical non-linear relating and magnetic. It was envisioned, and its name coined, in 1971 by circuit theorist. According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past; the device remembers its history — the so-called non-volatility property. When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again. In 2008, a team at claimed to have found Chua's missing memristor based on an analysis of a of thus connecting the operation of devices to the memristor concept. Convert Udf To Mp4 Software Downloads here.

The HP result was published in the scientific journal. Following this claim, Leon Chua has argued that the memristor definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects. There are, however, some serious doubts as to whether the memristor can actually exist in physical reality. Additionally, some experimental evidence contradicts Chua's generalization since a non-passive effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the, and. These devices are intended for applications in memories, computer logic and /neuromemristive computer architectures.

In 2013, Hewlett-Packard CTO Martin Fink suggested that commercial availability of memristor memory could arrive as early as 2018. In March 2012, a team of researchers from and the announced the first functioning memristor array built on a chip. This section contains content that is written like.

Please help by removing and inappropriate, and by adding encyclopedic content written from a. (February 2017) () Williams' solid-state memristors can be combined into devices called, which could replace transistors in future computers [ ], given their much higher circuit density. They can potentially be fashioned into solid-state memory, which would allow greater data density than hard drives with access times similar to, replacing both components. HP prototyped a crossbar latch memory that can fit 100 in a square centimeter, and proposed a scalable 3D design (consisting of up to 1000 layers or 1 per cm 3). In May 2008 HP reported that its device reaches currently about one-tenth the speed of DRAM.